Lin, Yu-Shyan : rechercher sur Z-Library

Lin, Yu-Shyan, Ma, Yeh-Chang, Lin, Yu-Ting

Année:

2010

Langue:

english

Fichier:

PDF, 381 KB

english, 2010

Effects of Selective and Nonselective Wet Gate Recess on InAlAs∕InGaAs Metamorphic Field-Effect Transistors with Double Delta Doping in InGaAs Channels

Journal:

Yu-Shyan Lin, Jia-Jhen Jiang

Année:

2011

Langue:

english

Fichier:

PDF, 566 KB

english, 2011

Temperature Dependence of Current Gain, Ideality Factor, and Offset Voltage of AlGaAs/GaAs and InGaP/GaAs HBTs

Journal:

Lin, Yu-Shyan, Jiang, Jia-Jhen

Année:

2009

Langue:

english

Fichier:

PDF, 326 KB

english, 2009

Optical characterization of InAlAs/InGaAs metamorphic high-electron mobility transistor structures with tensile and compressive strain

Chan, Ching-Hsiang, Ho, Ching-Hwa, Chen, Ming-Kai, Lin, Yu-Shyan, Huang, Ying-Sheng, Hsu, Wei-Chou

Journal:

Thin Solid Films

Année:

2013

Langue:

english

Fichier:

PDF, 708 KB

english, 2013

Novel Delta-Doped InAlGaP/GaAs Heterojunction Bipolar Transistor

Journal:

IEEE Electron Device Letters

Année:

2008

Langue:

english

Fichier:

PDF, 173 KB

english, 2008

Comprehensive Characterization of In[sub 0.45]Al[sub 0.55]As∕In[sub 0.5]Ga[sub 0.5]As∕In[sub x]Al[sub 1−x]As Metamorphic High-Electron-Mobility Transistors on GaAs Substrates

Lin, Yu-Shyan, Chen, Bo-Yuan

Journal:

Lin, Yu-Shyan, Hsieh, Yu-Lung

Année:

2006

Langue:

english

Fichier:

PDF, 146 KB

english, 2006

Effect of Temperature on Novel InAlGaP∕GaAs∕InGaAs Camel-Gate Pseudomorphic High-Electron-Mobility Transistors

Journal:

Lin, Yu-Shyan, Goa, Wei-Hou

Année:

2006

Langue:

english

Fichier:

PDF, 99 KB

english, 2006

High-temperature stability of improved AlGaN/AlN/GaN HEMT with pre-gate metal treatment

Journal:

IEICE Electronics Express

Année:

2019

Langue:

english

Fichier:

PDF, 1.34 MB

english, 2019

Investigation of a graded channel InGaAs/GaAs heterostructure transistor

Yih-Juan Li, Jan-Shing Su, Yu-Shyan Lin, Wei-Chou Hsu

Journal:

Superlattices and Microstructures

Année:

2000

Langue:

english

Fichier:

PDF, 154 KB

english, 2000

InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations

Yeong-Jia Chen, Wei-Chou Hsu, Yen-Wei Chen, Yu-Shyan Lin, Rong-Tay Hsu, Yue-Huei Wu

Journal:

Solid-State Electronics

Année:

2005

Langue:

english

Fichier:

PDF, 281 KB

english, 2005

High breakdown characteristic δ-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer HEMT

Yen-Wei Chen, Wei-Chou Hsu, Her-Ming Shieh, Yeong-Jia Chen, Yu-Shyan Lin, Yih-Juan Li, Tzong-Bin Wang

Journal:

Année:

2002

Langue:

english

Fichier:

PDF, 104 KB

english, 2002

Characteristics of In0.425Al0.575As-InxGa1-xAs metamorphic HEMTs with pseudomorphic and symmetrically graded channels

Wei-Chou Hsu, Yeong-Jia Chen, Ching-Sung Lee, Tzong-Bin Wang, Jun-Chin Huang, Dong-Hai Huang, Ke-Hua Su, Yu-Shyan Lin, Chang-Luen Wu

Journal:

Année:

2005

Langue:

english

Fichier:

PDF, 664 KB

english, 2005

Performance improvement in tensile-strained In0.5Al0.5As/InxGa1-xAs/In0.5Al0.5As metamorphic HEMT

Wei-Chou Hsu, Dong-Hai Huang, Yu-Shyan Lin, Yeong-Jia Chen, Jun-Chin Huang, Chang-Luen Wu

Journal:

Ho, Ching-Hwa, Li, Ji-Han, Lin, Yu-Shyan

Année:

2006

Langue:

english

Fichier:

PDF, 701 KB

english, 2006

Practical photoluminescence and photoreflectance spectroscopic system for optical characterization of semiconductor devices

Ho, Ching-Hwa, Huang, Kuo-Wei, Lin, Yu-Shyan, Lin, Der-Yuh

Journal:

Optics Express

Année:

2005

Langue:

english

Fichier:

PDF, 150 KB

english, 2005

Optical characterization of a GaAs/In_0.5(AlxGa_1-x)_0.5P/GaAs heterostructure cavity by piezoreflectance spectroscopy

Journal:

Optics Express

Année:

2007

Langue:

english

Fichier:

PDF, 152 KB

english, 2007

Temperature-dependent photoreflectance and photoluminescence characterization of the subband structure and built-in electric field of GaAs/GaInAs graded-channel high electron mobility transistor structures

Ho, Ching-Hwa, Li, Jian-Shen, Lin, Yu-Shyan

Journal:

IEEE Electron Device Letters

Année:

2009

Langue:

english

Fichier:

PDF, 396 KB

english, 2009

High-temperature thermal stability performance in /spl delta/-doped In/sub 0.425/Al/sub 0.575/As--In/sub 0.65/Ga/sub 0.35/As metamorphic HEMT

Wei-Chou Hsu,, Yeong-Jia Chen,, Ching-Sung Lee,, Tzong-Bin Wang,, Yu-Shyan Lin,, Chang-Luen Wu,

Journal:

Année:

2005

Langue:

english

Fichier:

PDF, 167 KB

english, 2005

Corrections to “Novel Delta-Doped InAlGaP/GaAs Heterojunction Bipolar Transistor” [Jul 08 671-673]

Lin, Yu-Shyan, Jiang, Jia-Jhen

Journal:

IEEE Electron Device Letters

Année:

2008

Fichier:

PDF, 37 KB

2008

Current Gain and Offset Voltage in an InGaP/GaAsSb/GaAs Double Heterojunction Bipolar Transistor

Lin, Yu-Shyan, Ng, Shao-Bin, Yu, Wen-Fu

Journal:

Hsu, Wei-Chou, Lee, Ching-Sung, Lin, Yu-Shyan

Année:

2012

Langue:

english

Fichier:

PDF, 619 KB

english, 2012

Characteristics of δ-doped InP heterostructures using In[sub 0.34]Al[sub 0.66]As[sub 0.85]Sb[sub 0.15] Schottky layer

Journal:

Journal of Applied Physics

Année:

2002

Langue:

english

Fichier:

PDF, 550 KB

english, 2002

Controllable drain cut-in voltage with strong negative differential resistance in GaAs/InGaAs real-space transfer heterostructure

Su, Jan-Shing, Hsu, Wei-Chou, Lin, Yu-Shyan, Lin, Wei

Journal:

Applied Physics Letters

Année:

1997

Langue:

english

Fichier:

PDF, 313 KB

english, 1997

An Improved I n 0.5G a 0.5P / G a A s Double Heterostructure-Emitter Bipolar Transistor Using Emitter Edge-Thinning Technique

Lin, Yu-Shyan, Wu, Yu-Huei, Su, Jan-Shing, Hsu, Wei-Chou, Ho, Shing-Dong, Lin, Wei

Journal:

Japanese Journal of Applied Physics

Année:

1997

Fichier:

PDF, 468 KB

1997

An Improved In0.34Al0.66As0.85Sb0.15/InP Heterostructure Utilizing Coupled δ-Doping InP Channel

Chen, Yeong-Jia, Chen, Yen-Wei, Lin, Yu-Shyan, Yeh, Chia-Yen, Li, Yih-Juan, Hsu, Wei-Chou

Journal:

Japanese Journal of Applied Physics

Année:

2001

Langue:

english

Fichier:

PDF, 156 KB

english, 2001

Microwave and power characteristics of AlGaN/GaN/Si high-electron mobility transistors with HfO 2 and TiO 2 passivation

Lin, Yu-Shyan, Lin, Shin-Fu, Hsu, Wei-Chou

Journal:

Lin, Yu-Shyan, Hsieh, Yu-Lung

Année:

2015

Langue:

english

Fichier:

PDF, 835 KB

english, 2015

Temperature-Dependent Characteristics of InGaP∕InGaAs∕GaAs High-Electron Mobility Transistor Measured between 77 and 470 K

Journal:

Lin, Yu-Shyan, Chen, Bo-Yuan

Année:

2005

Langue:

english

Fichier:

PDF, 78 KB

english, 2005

Performance of AlGaAs∕InGaAs∕GaAs Pseudomorphic High Electron Mobility Transistor as a Function of Temperature

Journal:

Année:

2007

Langue:

english

Fichier:

PDF, 129 KB

english, 2007

Comparison of Al[sub 0.32]Ga[sub 0.68]N∕GaN Heterostructure Field-Effect Transistors with Different Channel Thicknesses

Wang, Tzong-Bin, Hsu, Wei-Chou, Su, Jun-Long, Hsu, Rong-Tay, Wu, Yu-Huei, Lin, Yu-Shyan, Su, Ke-Hua

Journal:

Année:

2007

Langue:

english

Fichier:

PDF, 459 KB

english, 2007

Strain-Relaxed In[sub 0.1]Al[sub 0.25]Ga[sub 0.65]As∕In[sub 0.22]Ga[sub 0.78]As∕In[sub 0.1]Al[sub 0.25]Ga[sub 0.65]As HEMT

Huang, Dong-Hai, Hsu, Wei-Chou, Lin, Yu-Shyan, Huang, Juin-Chin, Wu, Chang-Luen

Journal:

Lin, Yu-Shyan, Chen, Bo-Yuan, Ho, Ching-Hwa

Année:

2006

Langue:

english

Fichier:

PDF, 196 KB

english, 2006

Comprehensive Characterization of AlGaAs∕InGaAs∕GaAs Composite-Channel High-Electron Mobility Transistor

Journal:

IEEE Journal of Photovoltaics

Année:

2007

Langue:

english

Fichier:

PDF, 750 KB

english, 2007

Characterization of Interfaces Between Contacts and Active Layer in Organic Photovoltaics Using Impedance Spectroscopy and Equivalent Circuit Model

Yao, En-Ping, Shiu, Shiun-Ming, Tsai, Yi-Jhe, Lin, Yu-Shyan, Hsu, Wei-Chou

Journal:

Année:

2015

Langue:

english

Fichier:

PDF, 1015 KB

english, 2015

Mobility Enhancement and Breakdown Behavior in InP-Based Heterostructure Field-effect Transistor

Lin, Yu-Shyan, Huang, Jr-Hung

Journal:

Lin, Yu-Shyan, Liang, Shih-Kai, Lin, You-Song

Année:

2005

Langue:

english

Fichier:

PDF, 81 KB

english, 2005

Performance of Surface and Gate-Engineered AlGaAs∕InGaAs Pseudomorphic High-Electron Mobility Transistors

Journal:

Japanese Journal of Applied Physics

Année:

2009

Langue:

english

Fichier:

PDF, 424 KB

english, 2009

Characteristics of Spike-Free Single and Double Heterostructure-Emitter Bipolar Transistors

Lin, Yu-Shyan, Hsu, Wei-Chou, Jong, Fuh-Cheng, Chiou, Yu-Zung, Chen, Yeong-Jia, Tang, Jing-Jou

Journal:

Année:

2004

Langue:

english

Fichier:

PDF, 110 KB

english, 2004

Comparative study of In 0.52 Al 0.48 As/In x Ga 1− x As/InP high-electron-mobility transistors with a symmetrically graded and an inversely graded channel

Huang, Dong-Hai, Hsu, Wei-Chou, Lin, Yu-Shyan, Wu, Yue-Huei, Hsu, Rong-Tay, Huang, Juin-Chin, Liao, Yin-Kai

Journal:

Année:

2006

Langue:

english

Fichier:

PDF, 210 KB

english, 2006

A metamorphic heterostructure field-effect transistor with a double delta-doped channel

Huang, Dong-Hai, Hsu, Wei-Chou, Lin, Yu-Shyan, Yeh, Jung-Han, Huang, Jun-Chin

Journal:

Lin, Yu-Shyan, Lu, Chi-Che, Hsu, Wei-Chou

Année:

2007

Langue:

english

Fichier:

PDF, 310 KB

english, 2007

Comprehensive characterization of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with TiO 2 gate dielectric

Journal:

Physica status solidi

Année:

2016

Langue:

english

Fichier:

PDF, 349 KB

english, 2016

Effects of postdeposition annealing on TiO 2 /GaN/AlGaN/GaN/Si metal-oxide-semiconductor high-electron mobility transistors

Lin, Yu-Shyan, Lu, Chi-Che

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Année:

2017

Langue:

english

Fichier:

PDF, 1.01 MB

english, 2017

[IEEE 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)] - Toyama, Japan (2016.6.26-2016.6.30)] 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) - AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with TiO2 gate dielectrics

Lin, Yu-Shyan, Lu, Chi-Che

Année:

2016

Fichier:

PDF, 17 KB

2016

Improved AlGaN/GaN Metal–Oxide– Semiconductor High-Electron Mobility Transistors With TiO 2 Gate Dielectric Annealed in Nitrogen

Lin, Yu-Shyan, Lu, Chi-Che

Journal: